IPB60R099CP MOSFET Power Electronics
High Performance Low Voltage Low Gate Charge
Description:
The MOSFET IPB60R099CP is a N-Channel MOSFET designed for high-power switching applications. This device is capable of high current handling and low on-state resistance, making it suitable for a variety of power supplies, DC-DC converters and other switching applications.
Parameters:
• Drain-Source Voltage: 600V
• Drain Current: 60A
• RDS(on): 0.099Ω
• Maximum Gate Threshold Voltage: 4V
• Maximum Gate Charge: 176nC
• Operating Temperature Range: -55°C to 175°C
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IPB60R099CP MOSFET Power Electronics High Performance Low Voltage Low Gate Charge Images
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