IRFP4768PBF MOSFET Power Electronics High Current Low On-Resistance, And High Efficiency

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IRFP4768PBF MOSFET Power Electronics High Current Low On-Resistance, And High Efficiency

Name: IRFP4768PBF MOSFET Power Electronics High Current Low OnResistance And High Efficiency
Brand: Infineon Technologies
Price: 1 USD

China IRFP4768PBF MOSFET Power Electronics High Current Low On-Resistance, And High Efficiency wholesale

Brand Name : Infineon Technologies

Model Number : IRFP4768PBF

Place of Origin : Mulit-origin

MOQ : 1

Price : Negotiable

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 999999

Delivery Time : 1-7days

Packaging Details : Standard

Product Status : Active

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Base Product Number : IRFP4768PBF

Drain source voltage (Vdss) : 250 V

Current - Continuous Drain (Id) @ 25°C : 93A (Tc)

Rds On (Max) @ Id, Vgs : 17.5mOhm @ 56A, 10V

Vgs(th) (Max) @ Id : 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 270 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds : 10880 pF @ 50 V

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Product Listing:

Product Name: IRFP4768PBF MOSFET

Package: TO-247

Number of Channels: 3

Drain Source Voltage (Vds): 500V

Continuous Drain Current (Id): 100A

Power Dissipation (Pd): 600W

RDS (on): 0.0042 Ohm

Maximum Drain Source On-State Resistance (RDS(on)): 0.0042 Ohm

Gate Threshold Voltage (Vgs): 2.8V

Input Capacitance (Ciss): 8550pF

Transition Frequency (ft): 50MHz

Operating Temperature: -55°C to 175°C

IRFP4768PBF MOSFET Power Electronics High Current Low On-Resistance, And High Efficiency

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IRFP4768PBF MOSFET Power Electronics High Current Low On-Resistance, And High Efficiency

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