IRFL9014TRPBF MOSFET Power Electronics High Power and Low On-Resistance for Maximum Efficiency
Product Description:
This is an N-Channel enhancement mode silicon gate power field effect transistor with an integral source-drain diode. It is designed for use in applications such as switching regulators, switching converters, motor drivers and other power management applications.
Product Parameters:
• Drain-Source Voltage: 60V
• Gate Threshold Voltage: 2.4V
• Drain Current: 4.2A (Tc = 25°C)
• Drain-Source On-State Resistance: 0.087Ω (Vgs = 10V)
• Maximum Power Dissipation: 512mW
• Operating Temperature Range: -55°C to +150°C
• Storage Temperature Range: -65°C to +175°C
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