BSS138L MOSFET Power Electronics N-Channel Enhancement Mode TO-236-3 Package
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
1. The BSS138L is a P-channel enhancement-mode MOSFET designed to provide reliable performance and high power density in a compact TO-236-3 package. It is ideally suited for applications such as load switches, small signal switching, and power management in portable electronics.
2. The BSS138L features a low on-state resistance, fast switching speed, and low gate charge for improved efficiency and reduced power loss. It also has a high breakdown voltage and low threshold voltage for improved robustness and reliability.
3. This MOSFET is designed to operate over a wide temperature range and offers excellent protection against thermal breakdown. It is also highly resistant to ESD, allowing it to perform reliably in the most demanding applications. The BSS138L is an ideal choice for a wide range of power electronics applications.
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BSS138L MOSFET Power Electronics N-Channel Enhancement Mode TO-236-3 Package Images
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