NVS4001NT1G MOSFET Power Electronics SC-70 High Efficiency Reliability Demanding Applications
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
The NVS4001NT1G is a SC-70 package MOSFET power electronics device manufactured by ON Semiconductor. This MOSFET has a drain-source voltage rating of 20 V, a drain current of 200 mA and an RDS(on) of 0.95 Ω. It is ideal for use in low voltage, low power applications such as DC-DC converters, load switches, and battery protection circuits. The NVS4001NT1G features fast switching times, low gate charge, and a low on-state resistance. It is also includes a variety of protection features such as reverse polarity protection, ESD protection, and over-voltage protection. This MOSFET is available in a variety of packages and is RoHS compliant.
This MOSFET power electronics device is designed to switch rapidly and reliably with a low on-resistance of 8 mΩ, making it an ideal choice for high-performance, high-power applications. The low gate charge of 5.8 nC ensures fast switching speeds and improved power efficiency. The device features a high voltage rating of 30 V and a continuous drain current of 2.4 A, making it suitable for a wide range of applications.
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NVS4001NT1G MOSFET Power Electronics SC-70 High Efficiency Reliability Demanding Applications Images
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