NTR4101PT1G MOSFET Power Electronics Transistor TO-236-3 Package Enhancement Mode
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
The NTR4101PT1G is a high-performance enhancement mode Power MOSFET with a low on-resistance of 0.16 Ohm. It is an ideal choice for applications in which low voltage and low on-resistance are key performance parameters. With a maximum drain source voltage of 60V, it is suitable for a variety of applications such as DC-DC converters and high-speed switching. The TO-236-3 package provides a low profile solution for space-constrained designs. The NTR4101PT1G also features fast switching speeds, low gate charge and low gate-to-drain capacitance, making it an excellent choice for high-speed switching applications. The NTR4101PT1G is designed and tested to meet the specifications of the international standard JEDEC and offers reliable operation in the harshest environments.
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NTR4101PT1G MOSFET Power Electronics Transistor TO-236-3 Package Enhancement Mode Images
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