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NTR5198NLT1G MOSFET Power Electronics TO-236-3 Package Transistor High Performance Applications

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NTR5198NLT1G MOSFET Power Electronics TO-236-3 Package Transistor High Performance Applications

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Brand Name : onsemi

Model Number : NTR5198NLT1G

Place of Origin : original

MOQ : 1

Price : Negotiable

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 999999

Delivery Time : 1 - 3 days

Packaging Details : standard

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 60V

Mounting Type : Surface Mount

Vgs (Max) : ±20V

Operating Temperature : -55°C ~ 150°C (TJ)

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NTR5198NLT1G MOSFET Power Electronics

TO-236-3 Package Transistor High Performance Applications

FET Type
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
155mOhm @ 1A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
2.8 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
182 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
900mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Supplier Device Package
SOT-23-3 (TO-236)
Package / Case

This NTR5198NLT1G MOSFET Power Electronics is a 3-pin TO-236-3 package. It offers high efficiency and low on-resistance while operating at a low voltage. It is suitable for applications such as power switches, motor drivers and solenoid drivers. This device has a high breakdown voltage of 30V, which provides a higher level of protection for the system. It also has an optimized gate charge for reduced conduction loss and improved switching performance. The device is an N-channel MOSFET optimized for low voltage switching applications. It is RoHS compliant and is offered in a lead free package. This device is ideal for high frequency switching and can operate at frequencies up to 10MHz.

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NTR5198NLT1G MOSFET Power Electronics TO-236-3 Package Transistor High Performance Applications


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