NTNS3164NZT5G MOSFET Power Electronics
SOT-883 High Performance High Reliability Applications
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
The NTNS3164NZT5G is a P-Channel enhancement mode transistor in SOT-883 (SC-88) package. It is designed for use in high-side switching applications where low side gate drive is not possible. This device features an on-resistance of 4.3 ohms, an RDS(ON) of 8.3mΩ, a maximum continuous drain current of -12A, and a maximum pulse current of -20A. It has excellent thermal performance, with a maximum junction temperature of 175 °C and a low gate charge of 17nC. This device is suitable for applications such as DC-DC converters, motor control, and portable electronics.
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