NVR5198NLT1G MOSFET Power Electronics
TO-236-3 Package N-Channel Enhancement Mode Transistor
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
The NVR5198NLT1G is a N-channel MOSFET power electronics device in a TO-236-3 package. This device features low on-resistance and fast switching performance, providing reliable operation and improved efficiency. It has an operating temperature range of -55°C to 175°C, and a power dissipation of 0.25W. This device is ideal for use in applications requiring high-speed switching of high-power devices, such as DC-DC converters and motor drives. The NVR5198NLT1G is RoHS compliant and halogen-free.
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NVR5198NLT1G MOSFET Power Electronics TO-236-3 Package N-Channel Enhancement Mode Transistor Images
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