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NTK3134NT1G Power MOSFET Transistor High Speed Switching Low On Resistance SOT-723 Package

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NTK3134NT1G Power MOSFET Transistor High Speed Switching Low On Resistance SOT-723 Package

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Brand Name : onsemi

Model Number : NTK3134NT1G

Place of Origin : original

MOQ : 1

Price : Negotiable

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 999999

Delivery Time : 1 - 3 days

Packaging Details : standard

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 20V

Mounting Type : Surface Mount

Vgs (Max) : ±6V

Operating Temperature : -55°C ~ 150°C (TJ)

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NTK3134NT1G Power MOSFET Transistor High Speed Switching Low On Resistance SOT-723 Package

Product Status
Active
FET Type
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Rds On (Max) @ Id, Vgs
350mOhm @ 890mA, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250µA
Vgs (Max)
±6V
Input Capacitance (Ciss) (Max) @ Vds
120 pF @ 16 V
FET Feature
-
Power Dissipation (Max)
310mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Supplier Device Package
SOT-723
Package / Case

The NTK3134NT1G is a N-channel Enhancement-mode MOSFET in a SOT-723 package. This device is designed for high-speed switching applications, with low gate charge, low on-state resistance and fast switching performance.

This MOSFET is ideal for use in applications such as DC-DC converters, switch mode power supplies and motor control. It offers improved thermal performance with a maximum continuous drain current of 240mA at 25°C, and a maximum power dissipation of 500mW.

The NTK3134NT1G is RoHS compliant and halogen free. It has a drain-source breakdown voltage of 30V, a drain-source on-state resistance of 0.9Ω and a gate-source threshold voltage of 1V. Additionally, it has a fast switching speed of 30V/ns.

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NTK3134NT1G Power MOSFET Transistor High Speed Switching Low On Resistance SOT-723 Package


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