NTGS5120PT1G MOSFET Power Electronics
SOT-23-6 High Performance Low On Resistance High Speed Switching
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
The NTGS5120PT1G is a N-Channel MOSFET power electronics device from ON Semiconductor. This device is housed in a SOT-23-6 package and is designed to provide efficient and reliable switching performance. The NTGS5120PT1G features a maximum drain source voltage of 20 V and a maximum drain current of 1.2 A. The gate threshold voltage of this device is 2 V max and the maximum power dissipation is 300 mW. This device has an RDS (ON) of 0.2 Ω and an operating temperature range of -55 °C to 150 °C. This device is ideal for applications such as DC-DC converters, load switches and battery management systems.
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NTGS5120PT1G MOSFET Power Electronics SOT-23-6 High Performance Low On Resistance High Speed Switching Images
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