FDD86369 MOSFET Power Electronics
High Performance N-Channel TO-252-3 Enhanced Reliability Durability
| Product Status | | |
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
The FDD86369 is a high voltage and high current N-channel MOSFET device designed for use in power electronic applications such as motor control, switching power supplies, power factor correction and other high power converters. It is packaged in a TO-252-3 package, which is an insulated package with three pins, making it ideal for applications where space is a premium. The device offers a low on-state resistance, fast switching speed and high current capability, as well as excellent thermal performance and superior reliability. It is designed to operate at temperatures up to 175°C and is capable of handling up to 60A drain current. The FDD86369 is a robust solution for power electronics applications.
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FDD86369 MOSFET Power Electronics High Performance N-Channel TO-252-3 Enhanced Reliability Durability Images
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