FDB33N25TM MOSFET Power Electronics Transistor N-Channel TO-263-3 Package
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
The FDB33N25TM is a TO-263-3 package N-channel MOSFET which is suitable for a broad range of switching applications, such as DC/DC converters, motor control, lighting, and power management. It has a low on-resistance and fast switching speed which enables efficient and reliable power conversion. The FDB33N25TM also offers superior thermal performance due to its low power dissipation, low gate charge, and ultra-low RDS(on). With integrated body diode and low gate charge, this MOSFET is suitable for higher frequency operation. Additionally, it features RoHS compliant lead-free packaging, which makes it an ideal choice for power electronics applications.
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FDB33N25TM MOSFET Power Electronics Transistor N-Channel TO-263-3 Package Images
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