2N7002KT1G MOSFET Power Electronics N-Channel Enhancement Mode Transistor TO-236-3 Package
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
The 2N7002KT1G is a N-Channel Enhancement Mode Field-Effect Transistor (MOSFET) housed in a TO-236-3 surface-mount package. This device is built using an advanced Trench MOSFET technology, allowing for a low on-resistance and fast switching times. This MOSFET can be used as a switch or amplifier in applications such as DC-DC converters, general-purpose switching, motor control and power management. It features a maximum drain-source voltage of 60V, a drain-source on-resistance of 4.3 mΩ and a maximum drain current of 200mA. This MOSFET is RoHS compliant and AEC-Q101 qualified.
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2N7002KT1G MOSFET Power Electronics N-Channel Enhancement Mode Transistor TO-236-3 Package Images
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