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FDMS86182 MOSFET Power Electronics N-Channel PowerTDFN-8 600V 7.5A 8.4mΩ RDS Current Switching Applications

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FDMS86182 MOSFET Power Electronics N-Channel PowerTDFN-8 600V 7.5A 8.4mΩ RDS Current Switching Applications

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Brand Name : onsemi

Model Number : FDMS86182

Place of Origin : original

MOQ : 1

Price : Negotiable

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 999999

Delivery Time : 1 - 3 days

Packaging Details : standard

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 100V

Mounting Type : Surface Mount

Vgs (Max) : ±20V

Operating Temperature : -55°C ~ 150°C (TJ)

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FDMS86182 MOSFET Power Electronics
N-Channel PowerTDFN-8 600V 7.5A 8.4mΩ RDS Current Switching Applications

FET Type
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
7.2mOhm @ 28A, 10V
Vgs(th) (Max) @ Id
4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 6 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2635 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
83W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Supplier Device Package
8-PQFN (5x6)
Package / Case

The FDMS86182 is an 8-PowerTDFN package Power MOSFET designed to handle high current applications in automotive and industrial applications. It features a low on-resistance design to minimize conduction losses, and high current capability up to 50A. This device is designed with a low gate charge and low gate resistance to minimize switching losses, and a fast switching speed to increase efficiency. It also features a low reverse transfer capacitance for improved EMI performance. The FDMS86182 is an excellent choice for applications that require high current, low losses, and high EMI performance.

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FDMS86182 MOSFET Power Electronics N-Channel PowerTDFN-8 600V 7.5A 8.4mΩ RDS Current Switching Applications


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