FDD86110 MOSFET Power Electronics TO-252-3 N-Channel Enhancement Mode Transistor Applications
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
The FDD86110 MOSFET Power Electronics is a TO-252-3 package, which is a three-pin package type. It is a N-Channel enhancement mode field effect transistor with an integral Schottky diode, designed to minimize conduction losses. It features very low on-state resistance and fast switching times. It is suitable for a variety of applications such as DC-DC converters, battery chargers, and power supplies. The FDD86110 provides a wide range of voltage and current ratings, with a maximum voltage of 100V and a maximum current of 18A. It is also RoHS compliant and certified for operation in harsh environments.
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FDD86110 MOSFET Power Electronics TO-252-3 N-Channel Enhancement Mode Transistor Applications Images
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