NTMFS4C302NT1G MOSFET Power
Electronics 8-PowerTDFN Package N-Channel Enhancement Mode Resistance Dissipation
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
The NTMFS4C302NT1G is a high-performance, low-on-resistance, N-channel enhancement-mode power MOSFET designed for DC-DC converters in handheld and portable applications. This device features a low gate-charge Qg, fast switching speed, and low on-state resistance. The small 8-PowerTDFN package is suitable for high-density applications.
The NTMFS4C302NT1G is AEC-Q101 qualified and optimized for high-current, high-side load switching applications, such as DC-DC converters and load switches. The device is protected against voltage transients caused by inductive load switching and electrostatic discharge.
The NTMFS4C302NT1G is designed to minimize the total power loss and reduce the system temperature in the application. The device can operate at frequencies up to 2 MHz with excellent thermal performance. The device is ideal for use in DC-DC converters in consumer and industrial applications.
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NTMFS4C302NT1G MOSFET Power Electronics 8-PowerTDFN Package N-Channel Enhancement Mode Resistance Dissipation Images
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