NTMFS4C08NT1G MOSFET Power
Electronic 4A 8V 8-PowerTDFN Voltage N-Channel Enhancement Mode Device
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
The NTMFS4C08NT1G is a N-channel MOSFET which is designed for use in power switching applications such as DC-DC converters, motor control, and power supplies. This MOSFET features an 8-PowerTDFN (Thin Dual Flat No-Lead) package that is designed for low-profile and high-density applications. It has a maximum drain source voltage of 40V, a drain-source on-resistance of 8.2mΩ, and a maximum continuous drain current of 4A. The NTMFS4C08NT1G is also RoHS compliant.
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NTMFS4C08NT1G MOSFET Power Electronic 4A 8V 8-PowerTDFN Voltage N-Channel Enhancement Mode Device Images
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