NTMFS4C03NT1G MOSFET Power Electronics
4A Ultra Low On Resistance Gate Charge AECQ101 Qualified Single N-Channel
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
The NTMFS4C03NT1G is a PowerTDFN 8-Pin Package N-Channel 20V (D-S) MOSFET from ON Semiconductor. It is designed for low voltage applications that require high speed switching and low on-resistance. This device features low gate charge and low drain-source on-state resistance. It is ideal for applications such as DC-DC converters, battery powered systems and other switching applications.
The NTMFS4C03NT1G is a logic-level MOSFET that provides superior switching performance in low voltage applications. It offers a low RDS(on) of 0.0085Ω and an input capacitance of 13.4pF. This device is RoHS compliant and is also specified for operation over an extended temperature range of -55°C to +150°C.
The NTMFS4C03NT1G is an ideal solution for DC to DC converters, battery powered systems, and other switching applications that require low voltage and fast switching. It features a low gate charge, low drain-source on-state resistance, and is RoHS compliant. This device is specified for operation over an extended temperature range of -55°C to +150°C.
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NTMFS4C03NT1G MOSFET Power Electronics 4A Ultra Low On Resistance Gate Charge AECQ101 Qualified Single N-Channel Images
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