NTMFS5C430NT1G MOSFET Power Electronics
8-PowerTDFN N-Channel Enhancement Mode 30V 4.3A 0.053Ω RDS
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
The NTMFS5C430NT1G is a low voltage N-channel enhancement mode power MOSFET designed for high power switching applications. This device features a low on-resistance, fast switching speed, and low input capacitance. The NTMFS5C430NT1G is offered with an 8-pin PowerTDFN package and is capable of operating at a low gate threshold voltage. This device is suitable for use in SMPS, DC/DC converters, and other power management applications. The NTMFS5C430NT1G delivers high power performance in a compact package and is ideal for high power switching requirements.
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NTMFS5C430NT1G MOSFET Power Electronics 8-PowerTDFN N-Channel Enhancement Mode 30V 4.3A 0.053Ω RDS Images
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