FQD7P20TM MOSFET Power Electronics
Product Overview:
The FQD7P20TM is a state-of-the-art MOSFET power electronics device designed to provide superior performance in a wide range of applications. This device is designed to meet the demands of high power applications, offering low on-resistance, high current capability, and low gate charge. It features advanced processing technology and is capable of delivering power over a wide range of voltages and temperatures.
Features:
• Low on-resistance
• High current capability
• Low gate charge
• Advanced processing technology
• Wide voltage range
• Wide temperature range
• Excellent thermal performance
Specifications:
• Drain-Source Voltage: 20V
• Drain Current (Continuous): 97A
• Drain Current (Pulsed): 146A
• RDS(on): 0.0035Ω
• Gate-Source Voltage: ±12V
• Operating Temperature: -55°C to 175°C
• Package Type: TO-220AB
• Maximum Power Dissipation: 87.2W
| Product Status | | |
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | | |
| Base Product Number | |
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Service >>>
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FQD7P20TM Power MOSFET - High Performance Low RDS(On) For Maximum Efficiency Images
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