FQD13N10LTM MOSFET Power Electronics
TO-252-3 N-Channel Enhancement Mode Field Effect Transistor
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
The FQD13N10LTM is a N-Channel MOSFET manufactured by Fairchild Semiconductor. It is designed to be used in power supply, motor control and other switch mode applications. It features an industry-standard TO-252-3 package and a maximum drain current of 13A.
The FQD13N10LTM has an on-state resistance of 0.01 ohms, a threshold voltage of 1.9V and a maximum drain-source voltage of 100V. It has excellent switching characteristics, allowing for minimal power dissipation and reduced switching noise. The FQD13N10LTM is a robust, reliable and cost effective solution for your power electronics applications.
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FQD13N10LTM MOSFET Power Electronics TO-252-3 N-Channel Enhancement Mode Field Effect Transistor Images
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