FDMC86102LZ N-Channel Enhancement Mode MOSFET Power Electronics for High Power and High Efficiency Applications Shielded

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Shenzhen Sai Collie Technology Co., Ltd.

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FDMC86102LZ N-Channel Enhancement Mode MOSFET Power Electronics for High Power and High Efficiency Applications Shielded

Name: FDMC86102LZ NChannel Enhancement Mode MOSFET Power Electronics for High Power and High Efficiency Applications Shielded
Brand: onsemi
Price: 1 USD

China FDMC86102LZ N-Channel Enhancement Mode MOSFET Power Electronics for High Power and High Efficiency Applications Shielded wholesale

Brand Name : onsemi

Model Number : FDMC86102LZ

Place of Origin : original

MOQ : 1

Price : Negotiable

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 999999

Delivery Time : 1-3 days

Packaging Details : standard

Drain to Source Voltage (Vdss) : 100 V

Current - Continuous Drain (Id) @ 25°C : 7A (Ta), 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 24mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id : 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 22 nC @ 10 V

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Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	7A (Ta), 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	24mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1290 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	2.3W (Ta), 41W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-MLP (3.3x3.3)
Package / Case	8-PowerWDFN

FDMC86102LZ N-Channel Enhancement Mode MOSFET Power Electronics for High Power and High Efficiency Applications Shielded

FDMC86102LZ N-Channel Enhancement Mode MOSFET Power Electronics for High Power and High Efficiency Applications Shielded

FDMC86102LZ N-Channel Enhancement Mode MOSFET Power Electronics for High Power and High Efficiency Applications Shielded Images