FDMA510PZ MOSFET Power Electronics
6-WDFN Voltage N-Channel Enhancement Mode Field Effect Transistor Automotive
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
The FDMA510PZ is a 6-WDFN package Power MOSFET from Fairchild Semiconductor. It is designed to deliver low resistance and high current capabilities. This device features a logic level gate threshold voltage of 1.8V and a drain-source breakdown voltage of 40V. It has a continuous drain current of 18A and a maximum pulsed drain current of 60A.
The maximum avalanche energy is 4mJ and the maximum power dissipation is 4W. This device is RoHS compliant and has a maximum junction temperature of 175°C. It is suitable for use in high power DC-DC converters, motor control systems, and other high current, high voltage applications.
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