BSS84LT1G MOSFET Power Electronics
TO-236-3 N-Channel Enhancement Mode Field Effect Transistor High Performance
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
The BSS84LT1G is a P-channel enhancement mode MOSFET transistor, housed in a TO-236-3 surface mount package. It features low ON-resistance, low gate charge and high transconductance capability, making it well-suited for a variety of switching and linear applications.
With its low on-resistance and low gate charge, the BSS84LT1G is well-suited for power management applications such as high-efficiency DC-DC converters, load switches and power amplifiers. It is also suitable for automotive applications due to its robust construction, low on-resistance, and high power dissipation capability. The BSS84LT1G is RoHS-compliant and is designed to meet the AEC-Q101 standard.
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BSS84LT1G MOSFET Power Electronics TO-236-3 N-Channel Enhancement Mode Field Effect Transistor High Performance Images
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