BSS138LT1G MOSFET Power Electronics
N-Channel Enhancement Mode Field Effect Transistor Applications TO-236-3 Package
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
The BSS138LT1G is a single N-Channel Enhancement Mode Field Effect Transistor in a TO-236-3 (SC-59) package. It has a low on-resistance and a low gate-to-source voltage, making it suitable for applications such as load and line switching, DC-DC converters, and motor control.
This device is designed to minimize on-state resistance while providing superior switching performance. The fast switching speed of this device allows it to be used in high-frequency switching applications. It is also designed to be ESD-resistant and highly robust against electro-static discharge. The BSS138LT1G is RoHS compliant and halogen-free.
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BSS138LT1G MOSFET Power Electronics N-Channel Enhancement Mode Field Effect Transistor Applications TO-236-3 Package Images
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