NVMFS5C612NLT1G MOSFET Power Electronics - High-Performance High-Efficiency Transistor for Advanced Power Applications

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Shenzhen Sai Collie Technology Co., Ltd.

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NVMFS5C612NLT1G MOSFET Power Electronics - High-Performance High-Efficiency Transistor for Advanced Power Applications

Name: NVMFS5C612NLT1G MOSFET Power Electronics HighPerformance HighEfficiency Transistor for Advanced Power Applications
Brand: onsemi
Price: 1 USD

Brand Name : onsemi

Model Number : NVMFS5C612NLT1G

Place of Origin : original

MOQ : 1

Price : Negotiable

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 999999

Delivery Time : 1-3 days

Packaging Details : standard

Drain to Source Voltage (Vdss) : 60 V

Current - Continuous Drain (Id) @ 25°C : 36A (Ta), 235A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 1.5mOhm @ 50A, 10V

Vgs(th) (Max) @ Id : 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 91 nC @ 10 V

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Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	36A (Ta), 235A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	91 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6660 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	3.8W (Ta), 167W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	5-DFN (5x6) (8-SOFL)
Package / Case	8-PowerTDFN, 5 Leads

NVMFS5C612NLT1G MOSFET Power Electronics - High-Performance High-Efficiency Transistor for Advanced Power Applications

NVMFS5C612NLT1G MOSFET Power Electronics - High-Performance High-Efficiency Transistor for Advanced Power Applications

NVMFS5C612NLT1G MOSFET Power Electronics - High-Performance High-Efficiency Transistor for Advanced Power Applications Images