FQA70N10 MOSFET Power Electronics TO-3PN Package N-Channel 100V enhancement mode
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
Features
• 70 A, 100 V, RDS(on) = 23 mΩ (Max) @VGS = 10 V, ID = 35 A
• Low Gate Charge (Typ. 85 nC) • Low Crss (Typ. 150 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications
Compliant Applications
Industrial Motor Drive
Industrial Power Supply
Industrial Automations
Battery Operated tools
Battery Protection
Solar Inverters
UPS and Energy Inverters
Energy Storage
Load Switch
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FQA70N10 MOSFET Power Electronics TO-3PN Package N-Channel 100V enhancement mode Images
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