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Brand Name : onsemi
Model Number : FDMA291P
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
Drain to Source Voltage (Vdss) : 20 V
Current - Continuous Drain (Id) @ 25°C : 6.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) Rds On, Min Rds On) : 1.8V, 4.5V
Rds On (Max) @ Id, Vgs : 42mOhm @ 6.6A, 4.5V
Vgs(th) (Max) @ Id : 1V @ 250µA
Vgs (Max) : ±8V
FDMA291P MOSFET Power Electronics Single P-Channel 1.8V Specified PowerTrench Package 6-WDFN
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
Rds On (Max) @ Id, Vgs | 42mOhm @ 6.6A, 4.5V | |
Vgs(th) (Max) @ Id | 1V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V | |
Vgs (Max) | ±8V | |
Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 10 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.4W (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | 6-MicroFET (2x2) | |
Package / Case |
General Description:
This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance.
The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
Features:
x –6.6 A, –20V. rDS(ON) = 42 m: @ VGS = –4.5V
rDS(ON) = 58 m: @ VGS = –2.5V
rDS(ON) = 98 m: @ VGS = –1.8V
Low profile – 0.8 mm maximum – in the new package
MicroFET 2x2 mm
Free from halogenated compounds and antimony
oxides
RoHS Compliant
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FDMA291P MOSFET Power Electronics Single P-Channel 1.8V Specified PowerTrench Package 6-WDFN Images |