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Brand Name : onsemi
Model Number : FDD2582
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
Drain to Source Voltage (Vdss) : 150 V
Current - Continuous Drain (Id) @ 25°C : 3.7A (Ta), 21A (Tc)
Drive VoDrive Voltage (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 66mOhm @ 7A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Vgs (Max) : ±20V
FDD2582 MOSFET Power Electronics N-Channel POWERTRENCH 150 V 21 A 66 m Package TO-252
N-Channel PowerTrench® MOSFETFDMS7678 MOSFET Power Electronics30 V, 22 A, 10 mΩ
echnology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Rds On (Max) @ Id, Vgs | 66mOhm @ 7A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 1295 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 95W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | | |
Supplier Device Package | TO-252AA | |
Package / Case |
Features
• rDS(ON)= 58 mΩ (Typ.), VGS= 10 V, ID = 7 A
• Qg(tot) = 19 nC (Typ.), VGS= 10 V
• Low Miller Charge
• Low QRRBody Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• These Devices are Pb−Free, Halide Free and are RoHS Compliant
Applications
• DC/DC Converters and Off−Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24 V and 48 V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection Systems
• 42 V Automotive Load Control
• Electronic Valve Train System
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FDD2582 MOSFET Power Electronics N-Channel POWERTRENCH 150 V 21 A 66 m Package TO-252 Images |