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Brand Name : onsemi
Model Number : FDMS8333L
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
Drain to Source Voltage (Vdss) : 40 V
Current - Continuous Drain (Id) @ 25°C : 22A (Ta), 76A (Tc)
Drive VoDrive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 3.1mOhm @ 22A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Vgs (Max) : ±20V
FDMS8333L MOSFET Power Electronics N-Channel PowerTrench® 40 V 76 A 3.1 mΩ Package 8-PQFN
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 3.1mOhm @ 22A, 10V | |
Vgs(th) (Max) @ Id | 3V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 4545 pF @ 20 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.5W (Ta), 69W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | 8-PQFN (5x6) | |
Package / Case |
Features:
Max rDS(on) = 3.1 mΩ at VGS = 10 V, ID = 22 A
Max rDS(on) = 4.3 mΩ at VGS = 4.5 V, ID = 19 A
Advanced Package and Silicon combination for low rDS(on) and high efficiency
Next generation enhanced body diode technology, engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
General Description:
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
Applications:
OringFET / Load Switching
Synchronous rectification
DC-DC Conversion
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FDMS8333L MOSFET Power Electronics N-Channel PowerTrench® 40 V 76 A 3.1 mΩ Package 8-PQFN Images |