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Brand Name : onsemi
Model Number : FDMC010N08C
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
Drain to Source Voltage (Vdss) : 80 V
Current - Continuous Drain (Id) @ 25°C : 11A (Ta), 51A (Tc)
Drive VoDrive Voltage (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 10mOhm @ 16A, 10V
Vgs(th) (Max) @ Id : 4V @ 90µA
Vgs (Max) : ±20V
FDMC010N08C MOSFET Power Electronics N-Channel Shielded Gate POWERTRENCH 80 V 51 A 10 m Package 8-PowerWDFN
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Rds On (Max) @ Id, Vgs | 10mOhm @ 16A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 90µA | |
Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 40 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.4W (Ta), 52W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | Power33 | |
Package / Case |
General Description
This N−Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized to minimise on−state resistance and yet maintain superior switching performance with best in class soft body diode.
Features
• Shielded Gate MOSFET Technology
• Max RDS(on) = 10 m at VGS = 10 V, ID = 16 A
• Max RDS(on) = 25 m at VGS = 6 V, ID = 8 A
• 50% Lower Qrr than Other MOSFET Suppliers
• Lowers Switching Noise/EMI
• MSL1 Robust Package Design
• 100% UIL Tested
• This Device is Pb−Free, Halide Free and is RoHS Compliant
Application
• Primary DC−DC MOSFET
• Synchronous Rectifier in DC−DC and AC−DC
• Motor Drive
• Solar
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FDMC010N08C MOSFET Power Electronics N-Channel Shielded Gate POWERTRENCH 80 V 51 A 10 m Package 8-PowerWDFN Images |