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Brand Name : onsemi
Model Number : FDMA410NZ
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
Drain to Source Voltage (Vdss) : 20 V
Current - Continuous Drain (Id) @ 25°C : 9.5A (Ta)
Drive VoDrive Voltage (Max Rds On, Min Rds On) : 1.5V, 4.5V
Rds On (Max) @ Id, Vgs : 23mOhm @ 9.5A, 4.5V
Vgs(th) (Max) @ Id : 1V @ 250µA
Vgs (Max) : ±8V
FDMA410NZ MOSFET Power Electronics Single N-Channel POWERTRENCH 1.5 V Specified Package 6-WDFN
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V | |
Rds On (Max) @ Id, Vgs | 23mOhm @ 9.5A, 4.5V | |
Vgs(th) (Max) @ Id | 1V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V | |
Vgs (Max) | ±8V | |
Input Capacitance (Ciss) (Max) @ Vds | 1080 pF @ 10 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.4W (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | 6-MicroFET (2x2) | |
Package / Case |
General Description
This Single N−Channel MOSFET has been designed using onsemi’s advanced POWERTRENCH process to optimize the RDS(on) @ VGS = 1.5 V on special MicroFET leadframe.
Features
• Max RDS(on) = 23 m at VGS = 4.5 V, ID = 9.5 A
• Max RDS(on) = 29 m at VGS = 2.5 V, ID = 8.0 A
• Max RDS(on) = 36 m at VGS = 1.8 V, ID = 4.0 A
• Max RDS(on) = 50 m at VGS = 1.5 V, ID = 2.0 A
• HBM ESD Protection Level > 2.5 kV (Note 3)
• Low Profile − 0.8 mm Maximum in the New Package MicroFET 2x2 mm
• Free from Halogenated Compounds and Antimony Oxides
• This Device is Pb−Free, Halide Free and is RoHS Compliant
Applications
• Li−lon Battery Pack
• Baseband Switch
• Load Switch
• DC−DC Conversion
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FDMA410NZ MOSFET Power Electronics Single N-Channel POWERTRENCH 1.5 V Specified Package 6-WDFN Images |