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Brand Name : Infineon
Model Number : IRLHM630TRPBF
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30 V
Current - Continuous Drain (Id) @ 25°C : 21A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 10V
Rds On (Max) @ Id, Vgs : 3.5mOhm @ 20A, 4.5V
IRLHM630TRPBF MOSFET Power Electronics N-Channel 30V(D-S)Package 8-VQFN
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V | |
Rds On (Max) @ Id, Vgs | 3.5mOhm @ 20A, 4.5V | |
Vgs(th) (Max) @ Id | 1.1V @ 50µA | |
Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 4.5 V | |
Vgs (Max) | ±12V | |
Input Capacitance (Ciss) (Max) @ Vds | 3170 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.7W (Ta), 37W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | PQFN (3x3) | |
Package / Case |
Applications
Battery Operated DC Motor Inverter MOSFET
Secondary Side Synchronous Rectification MOSFET
Features Benefits
Low RDSon (< 3.5m) Lower Conduction Losses
Low Thermal Resistance to PCB (<3.4°C/W) Enable better thermal dissipation
Low Profile (< 1.0 mm) results in Increased Power Density
Industry-Standard Pinout Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques Easier
Manufacturing
RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier
MSL1, Industrial Qualification Increased Reliability
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IRLHM630TRPBF MOSFET Power Electronics N-Channel 30V(D-S)Package 8-VQFN Images |