BSZ100N06LS3GATMA1 MOSFET Power Electronics N-Channel OptiMOSTM 3 Power-Transistor 60 V Package 8-PowerVDFN

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Shenzhen Sai Collie Technology Co., Ltd.

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BSZ100N06LS3GATMA1 MOSFET Power Electronics N-Channel OptiMOSTM 3 Power-Transistor 60 V Package 8-PowerVDFN

Name: BSZ100N06LS3GATMA1 MOSFET Power Electronics NChannel OptiMOSTM 3 PowerTransistor 60 V Package 8PowerVDFN
Brand: Infineon
Price: 1 USD

Brand Name : Infineon

Model Number : BSZ100N06LS3GATMA1

Place of Origin : original

MOQ : 1

Price : Negotiable

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 999999

Delivery Time : 1-3 days

Packaging Details : standard

FET Type : P-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 60 V

Current - Continuous Drain (Id) @ 25°C : 11A (Ta), 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 10mOhm @ 20A, 10V

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FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	11A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	10mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.2V @ 23µA
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3500 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	2.1W (Ta), 50W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TSDSON-8
Package / Case	8-PowerVDFN

BSZ100N06LS3GATMA1 MOSFET Power Electronics N-Channel OptiMOSTM 3 Power-Transistor 60 V Package 8-PowerVDFN

BSZ100N06LS3GATMA1 MOSFET Power Electronics N-Channel OptiMOSTM 3 Power-Transistor 60 V Package 8-PowerVDFN

BSZ100N06LS3GATMA1 MOSFET Power Electronics N-Channel OptiMOSTM 3 Power-Transistor 60 V Package 8-PowerVDFN Images