IRFB4020PBF MOSFET Power Electronics
TO-220AB Package N-Channel Low RDSON for improved efficiency
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
Features
• Key parameters optimized for Class-D audio amplifier applications
• Low RDSON for improved efficiency
• Low QG and QSW for better THD and improved efficiency
• Low QRR for better THD and lower EMI
• 175°C operating junction temperature for ruggedness
• Can deliver up to 300W per channel into 8Ω load in half-bridge configuration amplifier
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizesthe latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diodereverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performancefactors such as efficiency, THD and EMI.
Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for ClassD audio amplifier applications.
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IRFB4020PBF MOSFET Power Electronics TO-220AB Package N-Channel Low RDSON for improved efficiency Images
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