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Brand Name : Infineon
Model Number : BSZ084N08NS5ATMA1
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 80 V
Current - Continuous Drain (Id) @ 25°C : 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 8.4mOhm @ 20A, 10V
BSZ084N08NS5ATMA1 MOSFET Power Electronics N-Channel OptiMOS" 5 Power-Transistor 80 V Package 8-PowerTDFN
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Rds On (Max) @ Id, Vgs | 8.4mOhm @ 20A, 10V | |
Vgs(th) (Max) @ Id | 3.8V @ 31µA | |
Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 1820 pF @ 40 V | |
FET Feature | - | |
Power Dissipation (Max) | 63W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | PG-TSDSON-8-FL | |
Package / Case |
Features
·Ideal for high frequency switching and sync. rec.
·Optimized technology for DC/DC converters
·Excellent gate charge x Ros(on) product (FOM)
.Very low on-resistance Ros(on)
·N-channel,normallevel
·100% avalanche tested
·Pb-free plating; RoHS compliantQualified according to JEDEC1)for target applications-Halogen-free according to IEC61249-2-21
·Higher solder joint reliability with enlarged source interconnection
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BSZ084N08NS5ATMA1 MOSFET Power Electronics N-Channel OptiMOS" 5 Power-Transistor 80 V Package 8-PowerTDFN Images |