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Brand Name : Infineon
Model Number : BSC117N08NS5ATMA1
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 80 V
Current - Continuous Drain (Id) @ 25°C : 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 11.7mOhm @ 25A, 10V
BSC117N08NS5ATMA1 MOSFET Power Electronics N-Channel OptiMOSTm5 Power-Transistor 80 V Package 8-PowerTDFN
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Rds On (Max) @ Id, Vgs | 11.7mOhm @ 25A, 10V | |
Vgs(th) (Max) @ Id | 3.8V @ 22µA | |
Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 40 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | PG-TDSON-8-7 | |
Package / Case |
Features:
Optimized for high performance SMPS, e.g. sync. rec.
100% avalanche tested
Superior thermal resistance
N-channel
Qualified according to JEDECt) for target applications
Pb-free lead plating, RoHS compliant
Halogen-free according to lEC61249-2-21
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BSC117N08NS5ATMA1 MOSFET Power Electronics N-Channel OptiMOSTm5 Power-Transistor 80 V Package 8-PowerTDFN Images |