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Brand Name : onsemi
Model Number : FDB120N10
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
Drain to Source Voltage (Vdss) : 100 V
Current - Continuous Drain (Id) @ 25°C : 74A (Tc)
Drive VoDrive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 12mOhm @ 74A, 10V
Vgs(th) (Max) @ Id : 4.5V @ 250µA
Vgs (Max) : ±20V
FDB120N10 MOSFET Power Electronics N-Channel PowerTrench® 100 V 74 A 12 mΩ Package TO-263
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 12mOhm @ 74A, 10V | |
Vgs(th) (Max) @ Id | 4.5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 5605 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 170W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | | |
Supplier Device Package | D²PAK (TO-263) | |
Package / Case |
Features
• RDS(on) = 9.7 mΩ (Typ.) @ VGS = 10 V, ID = 74 A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
• Micro Solar Inverter
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FDB120N10 MOSFET Power Electronics N-Channel PowerTrench® 100 V 74 A 12 mΩ Package TO-263 Images |