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Brand Name : onsemi
Model Number : NVTFS4C05NTAG
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
Drain to Source Voltage (Vdss) : 30 V
Current - Continuous Drain (Id) @ 25°C : 22A (Ta), 102A (Tc)
Drive VoDrive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 3.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id : 2.2V @ 250µA
Vgs (Max) : ±20V
NVTFS4C05NTAG MOSFET Power Electronics Single N-Channel 8FL 30 V 3.6m 102 A Package 8-WDFN
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 3.6mOhm @ 30A, 10V | |
Vgs(th) (Max) @ Id | 2.2V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 1988 pF @ 15 V | |
FET Feature | - | |
Power Dissipation (Max) | 3.2W (Ta), 68W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | | |
Supplier Device Package | 8-WDFN (3.3x3.3) | |
Package / Case |
-60
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• NVTFS4C05NWF − Wettable Flanks Product
• NVT Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
res
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NVTFS4C05NTAG MOSFET Power Electronics Single N-Channel 8FL 30 V 3.6m 102 A Package 8-WDFN Images |