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Brand Name : onsemi
Model Number : FDMS86252L
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
Drain to Source Voltage (Vdss) : 150 V
Current - Continuous Drain (Id) @ 25°C : 4.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 56mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Vgs (Max) : ±20V
FDMS86252L MOSFET Electronics N-Channel Shielded Gate PowerTrench® 150 V 12 A 56 mΩ
N-Channel PowerTrench
Product Status | Active | |
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 56mOhm @ 4.4A, 10V | |
Vgs(th) (Max) @ Id | 3V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 1335 pF @ 75 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | 8-PQFN (5x6) | |
Package / Case |
Features
Shielded Gate MOSFET Technology
Max rDS(on) = 56 mΩ at VGS = 10 V, ID = 4.4 A
Max rDS(on) = 71 mΩ at VGS = 6 V, ID = 3.8 A
Max rDS(on) = 75 mΩ at VGS = 4.5 V, ID = 3.7 A
Advanced package and silicon combination for low rDS(on) andhigh efficiency
Next generation enhanced body diode technology, engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that
incorporates Shielded Gate technology. This process has been
optimized for the on-state resistance and yet maintain superior
switching performance.
Applications
OringFET / Load Switching
Synchronous Rectification
DC-DC Conversion
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FDMS86252L MOSFET Electronics N-Channel Shielded Gate PowerTrench® 150 V 12 A 56 mΩ Images |