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Brand Name : onsemi
Model Number : NVD5C684NLT4G
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
Drain to Source Voltage (Vdss) : 60 V
Current - Continuous Drain (Id) @ 25°C : 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 16.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id : 2.1V @ 250µA
Vgs (Max) : ±20V
NVD5C684NLT4G MOSFET Power Electronics 60 V 16.5 m 38 A Single N−Channel
N-Channel PowerTrench
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 16.5mOhm @ 15A, 10V | |
Vgs(th) (Max) @ Id | 2.1V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 4.6 nC @ 4.5 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 27W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | | |
Supplier Device Package | DPAK | |
Package / Case |
Features
• Low RDS(on) to Minimize Conduction Losses
• Low QG and Capacitance to Minimize Driver Losses
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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NVD5C684NLT4G MOSFET Power Electronics 60 V 16.5 m 38 A Single N−Channel Images |