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FQD18N20V2TM MOSFET Power Electronics N-Channel QFET® 200 V 15 A 140 mΩ

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FQD18N20V2TM MOSFET Power Electronics N-Channel QFET® 200 V 15 A 140 mΩ

Brand Name : onsemi

Model Number : FQD18N20V2TM

Place of Origin : original

MOQ : 1

Price : Negotiable

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 999999

Delivery Time : 1-3 days

Packaging Details : standard

Drain to Source Voltage (Vdss) : 200 V

Current - Continuous Drain (Id) @ 25°C : 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 140mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id : 5V @ 250µA

Vgs (Max) : ±30V

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N-Channel PowerTrench

P-Channel QFET® MOSFETFQD18N20V2TM MOSFET Power Electronics N-Channel QFET® 200 V 15 A 140 mΩ

-60 V, -12 A, 135
ET Type
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
140mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
26 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1080 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 83W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Supplier Device Package
TO-252AA
Package / Case

Description
©2009 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FQD18N20V2 — N-Channel QFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superiorswitching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

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FQD18N20V2TM MOSFET Power Electronics N-Channel QFET® 200 V 15 A 140 mΩ


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