Name: FQD17P06TM MOSFET Power Electronics PChannel QFET 60 V 12 A 135 mΩ
Brand: onsemi
Price: 1 USD

FQD17P06TM MOSFET Power Electronics P-Channel QFET -60 V -12 A 135 mΩ

Brand Name : onsemi

Model Number : FQD17P06TM

Place of Origin : original

MOQ : 1

Price : Negotiable

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 999999

Delivery Time : 1-3 days

Packaging Details : standard

Drain to Source Voltage (Vdss) : 60 V

Current - Continuous Drain (Id) @ 25°C : 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 135mOhm @ 6A, 10V

Vgs(th) (Max) @ Id : 4V @ 250µA

Vgs (Max) : ±25V

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Description

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especiallytailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor
control, and variable switching power applications.

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FQD17P06TM MOSFET Power Electronics P-Channel QFET -60 V -12 A 135 mΩ

FQD17P06TM MOSFET Power Electronics P-Channel QFET -60 V -12 A 135 mΩ

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FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	135mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	27 nC @ 10 V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	900 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 44W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252AA
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63


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FQD17P06TM MOSFET Power Electronics P-Channel QFET -60 V -12 A 135 mΩ

FQD17P06TM MOSFET Power Electronics P-Channel QFET -60 V -12 A 135 mΩ

FQD17P06TM MOSFET Power Electronics P-Channel QFET -60 V -12 A 135 mΩ Images