FQP33N10 MOSFET Power Electronics – High Power Switching Capability Low On-Resistance and Fast Switching Times

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Shenzhen Sai Collie Technology Co., Ltd.

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FQP33N10 MOSFET Power Electronics – High Power Switching Capability Low On-Resistance and Fast Switching Times

Name: FQP33N10 MOSFET Power Electronics High Power Switching Capability Low OnResistance and Fast Switching Times
Brand: onsemi
Price: 1 USD

Brand Name : onsemi

Model Number : FQP33N10

Place of Origin : original

MOQ : 1

Price : Negotiable

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 999999

Delivery Time : 1-3 days

Packaging Details : standard

Drain to Source Voltage (Vdss) : 100 V

Current - Continuous Drain (Id) @ 25°C : 33A (Tc)

Rds On (Max) @ Id, Vgs : 52mOhm @ 16.5A, 10V

Vgs(th) (Max) @ Id : 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 51 nC @ 10 V

Vgs (Max) : ±25V

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FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	52mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	51 nC @ 10 V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	1500 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	127W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3

FQP33N10 MOSFET Power Electronics – High Power Switching Capability Low On-Resistance and Fast Switching Times

FQP33N10 MOSFET Power Electronics – High Power Switching Capability Low On-Resistance and Fast Switching Times

FQP33N10 MOSFET Power Electronics – High Power Switching Capability Low On-Resistance and Fast Switching Times Images