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Brand Name : onsemi
Model Number : NTMFS4C029NT1G
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
Drain to Source Voltage (Vdss) : 30 V
Current - Continuous Drain (Id) @ 25°C : 15A (Ta), 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 5.88mOhm @ 30A, 10V
Vgs(th) (Max) @ Id : 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 18.6 nC @ 10 V
NTMFS4C029NT1G 5-DFN MOSFET Power Electronics ow On-Resistance Low Input Capacitance N-Channel 30 V 46 A
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 5.88mOhm @ 30A, 10V | |
Vgs(th) (Max) @ Id | 2.2V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 18.6 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 987 pF @ 15 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.49W (Ta), 23.6W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
Product Listing:
ON Semiconductor NTMFS4C029NT1G, MOSFET Power Electronics, 5-DFN Package
Product Parameters:
• Type: N-Channel Enhancement Mode
• Drain-Source Voltage: 20V
• Continuous Drain Current: 4A
• RDS(on): 0.029 ohm
• Gate-Source Voltage: ±20V
• Operating Temperature: -55°C to +150°C
• Pulsed Drain Current: 8A
• Mounting Type: Surface Mount
• Package/Case: 5-DFN (2x2)
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NTMFS4C029NT1G 5-DFN MOSFET Power Electronics ow On-Resistance Low Input Capacitance N-Channel 30 V 46 A Images |