Sign In | Join Free | My frbiz.com |
|
Brand Name : onsemi
Model Number : FDME905PT
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
Drain to Source Voltage (Vdss) : 12 V
Current - Continuous Drain (Id) @ 25°C : 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 4.5V
Rds On (Max) @ Id, Vgs : 22mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 20 nC @ 4.5 V
FDME905PT 6-PowerUFDFN MOSFET Electronics P-Channel POWERTRENCH −12 V −8 A 22 m
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
Rds On (Max) @ Id, Vgs | 22mOhm @ 8A, 4.5V | |
Vgs(th) (Max) @ Id | 1V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 4.5 V | |
Vgs (Max) | ±8V | |
Input Capacitance (Ciss) (Max) @ Vds | 2315 pF @ 6 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.1W (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | MicroFet 1.6x1.6 Thin | |
Package / Case |
Product Listing:
ON Semiconductor FDME905PT MOSFET Power Electronics, Package: 6-PowerUFDFN
Features:
- N-channel enhancement mode
- Low gate charge
- Low on-state resistance
- Low input capacitance
- Avalanche energy rated
- Ultra fast switching
- Ease of paralleling
- RoHS Compliant
Specifications:
- Drain-Source Voltage (VDS): 45V
- Drain Current (ID): 9A (Tc = 25°C)
- Gate-Source Voltage (VGS): ±20V
- Continuous Drain Current (ID): 8.0A
- Power Dissipation (PD): 1.2W
- Total Gate Charge (Qg): 4.0nC
- Threshold Voltage (VGS(th)): 2.0V
- On-Resistance (RDS(on)): 0.040Ω @ VGS = 10V
- Maximum Junction-to-Ambient Thermal Resistance (Rj-a): 31°C/W
- Operating and Storage Junction Temperature Range (Tj, Tstg): -55°
![]() |
FDME905PT 6-PowerUFDFN MOSFET Electronics P-Channel POWERTRENCH −12 V −8 A 22 m Images |