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Brand Name : onsemi
Model Number : FDN537N
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
Drain to Source Voltage (Vdss) : 30 V
Current - Continuous Drain (Id) @ 25°C : 6.5A (Ta), 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 23mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 8.4 nC @ 10 V
FDN537N High-Performance N-Channel MOSFET Single POWERTRENCH 30 V 6.5 A 23 m
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 23mOhm @ 6.5A, 10V | |
Vgs(th) (Max) @ Id | 3V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 8.4 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 465 pF @ 15 V | |
FET Feature | - | |
Power Dissipation (Max) | 1.5W (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | SOT-23-3 | |
Package / Case |
Product Listing:
ON Semiconductor FDN537N N-Channel Logic Level Enhancement Mode Field Effect Transistor, SOT-23 Package
Features:
• Low On-Resistance
• Logic Level Gate Threshold
• Low Input Capacitance
• Low Input/Output Leakage
• High Input Impedance
• Avalanche Rated
Applications:
• Switching
• Load Switching
• Battery Management
• Automotive
• Industrial
Parameters:
• VDSS: 100 V
• ID: 8.3 A
• RDS(on): 0.0075 Ω
• Qg: 1.2 nC
• Qgs: 0.9 nC
• Qgd: 0.35 nC
• Ciss: 30 pF
• Coss: 7.5 pF
• Crss: 2.5 pF
• Vth: 1.5 V
• VGS(off): -0.5 V
• Package: SOT-23
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FDN537N High-Performance N-Channel MOSFET Single POWERTRENCH 30 V 6.5 A 23 m Images |