NTS2101PT1G MOSFET Power Electronics
Transistor P-Channel Enhancement Mode Threshold 100V Drain Source SC-70
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
The NTS2101PT1G is a low voltage N-channel MOSFET transistor, packaged in an SC-70 package. This device is designed to provide high-efficiency power switching solutions in a wide range of applications.
It features an exceptionally low RDS(ON), low capacitance, and a high switching speed, which helps minimize power dissipation, reduce system power losses, and increase overall system efficiency. The NTS2101PT1G also features built-in protection against reverse voltages and reverse currents, making it an ideal choice for a variety of power management and switching applications.
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NTS2101PT1G MOSFET Power Electronics Transistor P-Channel Enhancement Mode Threshold 100V Drain Source SC-70 Images
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