IRFS3607TRLPBF MOSFET Power
Electronics High Voltage Low RDS on 55V 100A N Channel
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
Description:
This IRFS3607TRLPBF is a N-channel MOSFET designed for use in high side switching applications. It is rated for a maximum drain-source voltage of 60V, a drain current of 120A, and a maximum power dissipation of 60W. It also has a low on-resistance and fast switching speed which makes it suitable for high frequency switching applications.
Parameter:
• Drain-Source Voltage: VDSS = 60V
• Drain Current: ID = 120A
• Maximum Power Dissipation: PD = 60W
• On-Resistance: RDS(ON) = 0.0014 Ohm
• Gate Charge: Qg = 25nC
• Operating Temperature Range: -55°C to +150°C
• Mounting Type: SMD
• Package/Case: TO-220
• Supplier Device Package: TO-220AB
• Switching Frequency: fsw = 65KHz
• Input Capacitance: Ciss = 900pF
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IRFS3607TRLPBF MOSFET Power Electronics High Voltage Low RDS on 55V 100A N Channel Images
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